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| igbt highspeed5igbtintrenchstop tm 5technologycopackedwithrapid1 fastandsoftantiparalleldiode ikz75n65eh5 650vduopackigbtanddiode highspeedseriesfifthgeneration datasheet industrialpowercontrol
2 ikz75n65eh5 highspeedseriesfifthgeneration rev.2.1,2014-10-31 highspeed5igbtintrenchstop tm 5technologycopackedwithrapid1 fastandsoftantiparalleldiode featuresandbenefits: highspeedh5technologyoffering ?ultralowlossswitchingthankstokelvinemitterpinin combinationwithtrenchstop tm 5 ?best-in-classefficiencyinhardswitchingandresonant topologies ?plugandplayreplacementofpreviousgenerationigbts ?650vbreakdownvoltage ?lowgatechargeq g ?igbtcopackedwithrapid1fastandsoftantiparalleldiode ?maximumjunctiontemperature175c ?qualifiedaccordingtojedecfortargetapplications ?pb-freeleadplating;rohscompliant ?completeproductspectrumandpspicemodels: http://www.infineon.com/igbt/ applications ?uninterruptiblepowersupplies ?weldingconverters ?midtohighrangeswitchingfrequencyconverters ?solarstringinverters packagepindefinition: ?pinc&backside-collector ?pine-emitter ?pink-kelvinemitter ?ping-gate pleasenote:theemitterandkelvinemitterpinsarenot exchangeable.theirexchangemightleadtomalfunction. keyperformanceandpackageparameters type v ce i c v cesat , t vj =25c t vjmax marking package ikz75n65eh5 650v 75a 1.65v 175c K75EEH5 pg-to247-4 3 ikz75n65eh5 highspeedseriesfifthgeneration rev.2.1,2014-10-31 tableofcontents description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 table of contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 thermal resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 package drawing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 testing conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16 disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16 4 ikz75n65eh5 highspeedseriesfifthgeneration rev.2.1,2014-10-31 maximumratings foroptimumlifetimeandreliability,infineonrecommendsoperatingconditionsthatdonotexceed80%ofthemaximumratingsstatedinthisdatasheet. parameter symbol value unit collector-emittervoltage, t vj 3 25c v ce 650 v dccollectorcurrent,limitedby t vjmax t c =25cvaluelimitedbybondwire t c =100c i c 90.0 75.0 a pulsedcollectorcurrent, t p limitedby t vjmax 1) i cpuls 300.0 a turn off safe operating area v ce 650v, t vj 175c, t p =1s 1) - 300.0 a diodeforwardcurrent,limitedby t vjmax t c =25cvaluelimitedbybondwire t c =100c i f 95.0 85.0 a diodepulsedcurrent, t p limitedby t vjmax 1) i fpuls 300.0 a gate-emitter voltage transientgate-emittervoltage( t p 10s,d<0.010) v ge 20 30 v powerdissipation t c =25c powerdissipation t c =100c p tot 395.0 197.0 w operating junction temperature t vj -40...+175 c storage temperature t stg -55...+150 c soldering temperature, wave soldering 1.6mm (0.063in.) from case for 10s 260 c mounting torque, m3 screw maximum of mounting processes: 3 m 0.6 nm thermalresistance parameter symbol conditions max.value unit characteristic igbt thermal resistance, junction - case r th(j-c) 0.38 k/w diode thermal resistance, junction - case r th(j-c) 0.46 k/w thermal resistance junction - ambient r th(j-a) 40 k/w 1) defined by design. not subject to production test. 5 ikz75n65eh5 highspeedseriesfifthgeneration rev.2.1,2014-10-31 electricalcharacteristic,at t vj =25c,unlessotherwisespecified value min. typ. max. parameter symbol conditions unit staticcharacteristic collector-emitter breakdown voltage v (br)ces v ge =0v, i c =0.20ma 650 - - v collector-emitter saturation voltage v cesat v ge =15.0v, i c =75.0a t vj =25c t vj =100c t vj =150c - - - 1.65 1.82 1.90 2.10 - - v diode forward voltage v f v ge =0v, i f =75.0a t vj =25c t vj =100c t vj =150c - - - 1.35 1.33 1.30 1.70 - - v gate-emitter threshold voltage v ge(th) i c =0.75ma, v ce = v ge 3.2 4.0 4.8 v zero gate voltage collector current i ces v ce =650v, v ge =0v t vj =25c t vj =175c - - - 3300.0 75.0 - a gate-emitter leakage current i ges v ce =0v, v ge =20v - - 100 na transconductance g fs v ce =20v, i c =75.0a - 104.0 - s electricalcharacteristic,at t vj =25c,unlessotherwisespecified value min. typ. max. parameter symbol conditions unit dynamiccharacteristic input capacitance c ies - 4300 - output capacitance c oes - 130 - reverse transfer capacitance c res - 16 - v ce =25v, v ge =0v,f=1mhz pf gate charge q g v cc =520v, i c =75.0a, v ge =15v - 166.0 - nc internal emitter inductance 1) measured 5mm (0.197 in.) from case l e - 13.0 - nh switchingcharacteristic,inductiveload value min. typ. max. parameter symbol conditions unit igbtcharacteristic,at t vj =25c turn-on delay time t d(on) - 26 - ns rise time t r - 11 - ns turn-off delay time t d(off) - 347 - ns fall time t f - 15 - ns turn-on energy e on - 0.68 - mj turn-off energy e off - 0.43 - mj total switching energy e ts - 1.11 - mj t vj =25c, v cc =400v, i c =37.5a, v ge =0.0/15.0v, r g(on) =10.0 w , r g(off) =18.0 w , l s =30nh, c s =25pf l s , c s fromfig.e energy losses include tail and diode reverse recovery. 1) the internal emitter inductance does not affect the gate control circuitry if bypassed by using the emitter sense pin. 6 ikz75n65eh5 highspeedseriesfifthgeneration rev.2.1,2014-10-31 diodecharacteristic,at t vj =25c diode reverse recovery time t rr - 58 - ns diode reverse recovery charge q rr - 1.02 - c diode peak reverse recovery current i rrm - 29.0 - a diode peak rate of fall of reverse recoverycurrentduring t b di rr /dt - -2800 - a/s t vj =25c, v r =400v, i f =37.5a, di f /dt =1500a/s switchingcharacteristic,inductiveload value min. typ. max. parameter symbol conditions unit igbtcharacteristic,at t vj =150c turn-on delay time t d(on) - 24 - ns rise time t r - 13 - ns turn-off delay time t d(off) - 400 - ns fall time t f - 15 - ns turn-on energy e on - 1.10 - mj turn-off energy e off - 0.48 - mj total switching energy e ts - 1.58 - mj t vj =150c, v cc =400v, i c =37.5a, v ge =0.0/15.0v, r g(on) =10.0 w , r g(off) =18.0 w , l s =30nh, c s =25pf l s , c s fromfig.e energy losses include tail and diode reverse recovery. diodecharacteristic,at t vj =150c diode reverse recovery time t rr - 91 - ns diode reverse recovery charge q rr - 2.58 - c diode peak reverse recovery current i rrm - 42.0 - a diode peak rate of fall of reverse recoverycurrentduring t b di rr /dt - -1845 - a/s t vj =150c, v r =400v, i f =37.5a, di f /dt =1500a/s 7 ikz75n65eh5 highspeedseriesfifthgeneration rev.2.1,2014-10-31 figure 1. forwardbiassafeoperatingarea ( d =0, t c =25c, t vj 175c, v ge =15v, t p =1s, i cmax definedbydesign-notsubjectto production test) v ce ,collector-emittervoltage[v] i c ,collectorcurrent[a] 1 10 100 1000 0.1 1 10 100 not for linear use figure 2. powerdissipationasafunctionofcase temperature ( t vj 175c) t c ,casetemperature[c] p tot ,powerdissipation[w] 25 50 75 100 125 150 175 0 50 100 150 200 250 300 350 400 figure 3. collectorcurrentasafunctionofcase temperature ( v ge 3 15v, t vj 175c) t c ,casetemperature[c] i c ,collectorcurrent[a] 25 50 75 100 125 150 175 0 10 20 30 40 50 60 70 80 90 100 figure 4. typicaloutputcharacteristic ( t vj =25c) v ce ,collector-emittervoltage[v] i c ,collectorcurrent[a] 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 0 30 60 90 120 150 180 210 240 270 300 v ge = 19v 18v 15v 14v 11v 9v 8v 7v 5v 8 ikz75n65eh5 highspeedseriesfifthgeneration rev.2.1,2014-10-31 figure 5. typicaloutputcharacteristic ( t vj =175c) v ce ,collector-emittervoltage[v] i c ,collectorcurrent[a] 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 0 30 60 90 120 150 180 210 240 270 300 v ge = 19v 17v 15v 11v 9v 8v figure 6. typicaltransfercharacteristic ( v ce =20v) v ge ,gate-emittervoltage[v] i c ,collectorcurrent[a] 3 4 5 6 7 8 9 10 0 30 60 90 120 150 180 210 240 270 300 t vj = 25c t vj = 175c figure 7. typicalcollector-emittersaturationvoltageas afunctionofjunctiontemperature ( v ge =15v) t vj ,junctiontemperature[c] v cesat ,collector-emittersaturation[v] 25 50 75 100 125 150 175 0.50 0.75 1.00 1.25 1.50 1.75 2.00 2.25 i c = 20a i c = 37.5a i c = 75a figure 8. typicalswitchingtimesasafunctionof collectorcurrent (inductiveload, t vj =150c, v ce =400v, v ge =0/15v, r g(on) =10 w , r g(off) =18 w ,dynamic test circuit in figure e) i c ,collectorcurrent[a] t ,switchingtimes[ns] 0 25 50 75 100 125 150 175 200 225 1 10 100 1000 t d(off) t f t d(on) t r 9 ikz75n65eh5 highspeedseriesfifthgeneration rev.2.1,2014-10-31 figure 9. typicalswitchingtimesasafunctionofgate resistance (inductiveload, t vj =150c, v ce =400v, v ge =0/15v, i c =37.5a,dynamictestcircuitin figure e) r g ,gateresistance[ w ] t ,switchingtimes[ns] 0 10 20 30 40 50 1 10 100 1000 t d(off) t f t d(on) t r figure 10. typicalswitchingtimesasafunctionof junctiontemperature (inductiveload, v ce =400v, v ge =0/15v, i c =37.5a, r g(on) =10 w , r g(off) =18 w ,dynamic test circuit in figure e) t vj ,junctiontemperature[c] t ,switchingtimes[ns] 25 50 75 100 125 150 175 1 10 100 1000 t d(off) t f t d(on) t r figure 11. gate-emitterthresholdvoltageasafunction ofjunctiontemperature ( i c =0.75ma) t vj ,junctiontemperature[c] v ge(th) ,gate-emitterthresholdvoltage[v] 25 50 75 100 125 150 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 typ. min. max. figure 12. typicalswitchingenergylossesasa functionofcollectorcurrent (inductiveload, t vj =150c, v ce =400v, v ge =0/15v, r g(on) =10 w , r g(off) =18 w , dynamic test circuit in figure e) i c ,collectorcurrent[a] e ,switchingenergylosses[mj] 0 25 50 75 100 125 150 175 200 225 0 1 2 3 4 5 6 7 8 9 e off e on e ts 10 ikz75n65eh5 highspeedseriesfifthgeneration rev.2.1,2014-10-31 figure 13. typicalswitchingenergylossesasa functionofgateresistance (inductiveload, t vj =150c, v ce =400v, v ge =0/15v, i c =37.5a,dynamictestcircuitin figure e) r g ,gateresistance[ w ] e ,switchingenergylosses[mj] 0 10 20 30 40 50 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 e off e on e ts figure 14. typicalswitchingenergylossesasa functionofjunctiontemperature (inductiveload, v ce =400v, v ge =0/15v, i c =37.5a, r g(on) =10 w , r g(off) =18 w ,dynamic test circuit in figure e) t vj ,junctiontemperature[c] e ,switchingenergylosses[mj] 25 50 75 100 125 150 175 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 e off e on e ts figure 15. typicalswitchingenergylossesasa functionofcollectoremittervoltage (inductiveload, t vj =150c, v ge =0/15v, i c =37.5a, r g(on) =10 w , r g(off) =18 w ,dynamic test circuit in figure e) v ce ,collector-emittervoltage[v] e ,switchingenergylosses[mj] 200 250 300 350 400 0.00 0.25 0.50 0.75 1.00 1.25 1.50 1.75 e off e on e ts figure 16. typicalgatecharge ( i c =75a) q g ,gatecharge[nc] v ge ,gate-emittervoltage[v] 0 20 40 60 80 100 120 140 160 180 0 2 4 6 8 10 12 14 16 v ce = 130v v ce = 520v 11 ikz75n65eh5 highspeedseriesfifthgeneration rev.2.1,2014-10-31 figure 17. typicalcapacitanceasafunctionof collector-emittervoltage ( v ge =0v,f=1mhz) v ce ,collector-emittervoltage[v] c ,capacitance[pf] 0 5 10 15 20 25 30 10 100 1000 1e+4 c ies c oes c res figure 18. igbttransientthermalimpedance ( d = t p /t) t p ,pulsewidth[s] z th(j - c) ,transientthermalimpedance[k/w] 1e-6 1e-5 1e-4 0.001 0.01 0.1 0.001 0.01 0.1 d = 0.5 0.2 0.1 0.05 0.02 0.01 single pulse i: r i [k/w]: t i [s]: 1 0.010336 2.8e-5 2 0.078242 2.3e-4 3 0.081139 2.3e-3 4 0.196217 0.013145 5 0.015938 0.113481 6 1.8e-3 1.869237 figure 19. diodetransientthermalimpedanceasa functionofpulsewidth ( d = t p /t) t p ,pulsewidth[s] z th(j - c) ,transientthermalimpedance[k/w] 1e-6 1e-5 1e-4 0.001 0.01 0.1 0.001 0.01 0.1 d = 0.5 0.2 0.1 0.05 0.02 0.01 single pulse i: r i [k/w]: t i [s]: 1 3.1e-4 1.0e-5 2 0.01435 3.0e-5 3 0.09435 2.2e-4 4 0.09881 2.2e-3 5 0.22828 0.01247 6 0.01967 0.10291 7 2.0e-3 1.85641 figure 20. typicalreverserecoverytimeasafunction ofdiodecurrentslope ( v r =400v) di f /dt ,diodecurrentslope[a/s] t rr ,reverserecoverytime[ns] 1000 1500 2000 2500 3000 3500 4000 4500 0 10 20 30 40 50 60 70 80 90 100 110 t vj = 25c, i f = 37.5a t vj = 150c, i f = 37.5a 12 ikz75n65eh5 highspeedseriesfifthgeneration rev.2.1,2014-10-31 figure 21. typicalreverserecoverychargeasa functionofdiodecurrentslope ( v r =400v) di f /dt ,diodecurrentslope[a/s] q rr ,reverserecoverycharge[c] 1000 1500 2000 2500 3000 3500 4000 4500 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 t vj = 25c, i f = 37.5a t vj = 150c, i f = 37.5a figure 22. typicalreverserecoverycurrentasa functionofdiodecurrentslope ( v r =400v) di f /dt ,diodecurrentslope[a/s] i rr ,reverserecoverycurrent[a] 1000 1500 2000 2500 3000 3500 4000 4500 0 10 20 30 40 50 60 70 80 90 100 t vj = 25c, i f = 37.5a t vj = 150c, i f = 37.5a figure 23. typicaldiodepeakrateoffallofreverse recoverycurrentasafunctionofdiode currentslope ( v r =400v) di f /dt ,diodecurrentslope[a/s] di rr /dt ,diodepeakrateoffallof i rr [a/ns] 1000 1500 2000 2500 3000 3500 4000 4500 -10 -9 -8 -7 -6 -5 -4 -3 -2 -1 0 t vj = 25c, i f = 37.5a t vj = 150c, i f = 37.5a figure 24. typicaldiodeforwardcurrentasafunction offorwardvoltage v f ,forwardvoltage[v] i f ,forwardcurrent[a] 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 0 30 60 90 120 150 180 210 240 270 300 t vj = 25c t vj = 175c 13 ikz75n65eh5 highspeedseriesfifthgeneration rev.2.1,2014-10-31 figure 25. typicaldiodeforwardvoltageasafunction ofjunctiontemperature t vj ,junctiontemperature[c] v f ,forwardvoltage[v] 25 50 75 100 125 150 175 0.50 0.75 1.00 1.25 1.50 1.75 i f = 20a i f = 37.5a i f = 75a 14 ikz75n65eh5 highspeedseriesfifthgeneration rev.2.1,2014-10-31 ! " " # ! # ! $%& "! # !" ! " ! " " # !# !" ## # ! # !# ! ! ! # !! $'( " " ! # "! ! ! " #! )* $%& $'( # " +,- .-,/), +. ) # 00 1, 2 2 ! ,)+ .,3 4" " 5 6 5 7 # # " # 89:;<=>?:> 15 ikz75n65eh5 highspeedseriesfifthgeneration rev.2.1,2014-10-31 ! " " # ! # ! $%& "! # !" ! " ! " " # !# !" ## # ! # !# ! ! ! # !! $'( " " ! # "! ! ! " #! )* $%& $'( # " +,- .-,/), +. ) # 00 1, 2 2 ! ,)+ .,3 4" " 5 6 5 7 # # " # 89:;<=>?:> t a a b b t d(off) t f t r t d(on) 90% i c 10% i c 90% i c 10% v ge 10% i c t 90% v ge v ge (t) t t i c (t) v ce (t) 90% v ge v ge (t) t t i c (t) v ce (t) t t 1 t 4 2% i c 10% v ge 2% v ce t 2 t 3 e t t v i t off = x x d 1 2 ce c e t t v i t on = x x d 3 4 ce c cc parasitic relief 16 ikz75n65eh5 high speed series fifth generation rev. 2.1, 2014-10-31 revision history ikz75n65eh5 previous revision revision date subjects (major changes since last revision) 1.1 2014-10-17 preliminary data sheet 2.1 - final data sheet ! " " # ! # ! $%& "! # !" ! " ! " " # !# !" ## # ! # !# ! ! ! # !! $'( " " ! # "! ! ! " #! )* $%& $'( # " +,- .-,/), +. ) # 00 1, 2 2 ! ,)+ .,3 4" " 5 6 5 7 # # " # 89:;<=>?:> t a a b b t d(off) t f t r t d(on) 90% i c 10% i c 90% i c 10% v ge 10% i c t 90% v ge v ge (t) t t i c (t) v ce (t) 90% v ge v ge (t) t t i c (t) v ce (t) t t 1 t 4 2% i c 10% v ge 2% v ce t 2 t 3 e t t v i t off = x x d 1 2 ce c e t t v i t on = x x d 3 4 ce c cc parasitic relief |
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